Deposition of a siloxane containing polymer
US6475564B1 · kind B1 · utility
34Cited by
5References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.