Method for forming fine structure
US6475704B1 · kind B1 · utility
27Cited by
8References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1998 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Sep 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0005
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.