Semiconductor device having gate insulating layers different in thickness and material and process for fabrication thereof
US6475862B1 · kind B1 · utility
17Cited by
12References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Aug 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field effect transistors of an integrated circuit are fabricated on a silicon substrate, and require gate insulating layers appropriate for the purpose of individual component circuits, the active areas assigned the field effect transistors are sequentially exposed to source gas varied in the ratio between oxygen and nitrogen for growing silicon oxide and/or silicon oxynitride thereon, and the nitrogen serves as a diffusion inhibitor against the oxygen so as to form the gate insulating layers different in thickness of the order of several angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.