Process for fabricating a semiconductor component
US6475876B2 · kind B2 · utility
3Cited by
21References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 16, 1999 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Aug 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
Abstract
In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate (1) is provided with metal layers (3, 4) in order to form electrode terminals and with passivation (2), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer (3) on the irradiation side and the passivation (2) are not applied until after the particle irradiation (P). As a result, a continuous defect region (5), which precludes undesired edge effects, is obtained in the semiconductor substrate (1).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.