Method for improved fabrication of salicide structures
US6475893B2 · kind B2 · utility
9Cited by
18References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor material for formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.