Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
US6475912B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 28, 1999 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | May 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device of the present invention includes: a substrate; a first conductor film supported by the substrate; an insulating film formed on the substrate to cover the first conductor film, an opening being formed in the insulating film; and a second conductor film, which is formed within the opening of the insulating film and is in electrical contact with the first conductor film. The second conductor film includes: a silicon-containing titanium nitride layer formed within the opening of the insulating film; and a metal layer formed over the silicon-containing titanium nitride layer. The metal layer is mainly composed of copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.