Process for depositing a Ta2O5 dielectric layer
US6475928B1 · kind B1 · utility
4Cited by
4References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 1998 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jul 15, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C28/042
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The process comprises the following steps:a) pretreatment of a surface of the substrate by means of a cold gas plasma at low or medium pressure in order to clean the said surface;b) growth, from the said cleaned surface of the substrate, of a nitride barrier layer by means of a cold gas plasma made up of an N2/H2 mixture at low or medium pressure; andc) deposition, on the nitride barrier layer, of a Ta2O5 dielectric layer by chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.