Patent · US Expired

Method for producing devices having piezoelectric films

US6475931B2 · kind B2 · utility

10Cited by
4References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 21, 2001
Grant dateNov 5, 2002
Priority date
Expiry dateMay 21, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/964
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A method for achieving improved piezoelectric films for use in a resonator device is disclosed. The method is based on applicant's recognition that the texture of a piezoelectric film (e.g., as used in a piezoelectric resonator) is directly affected by the surface morphology of the underlying electrode, and additionally, the surface morphology of the electrode is affected by the surface morphology of the underlying oxide layer or Bragg stack. Accordingly, the invention includes a method of making a device having a piezoelectric film and electrode including controlling the deposition and surface roughness of the electrode and optionally, the Bragg stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.