CMOS active pixel sensor using native transistors
US6476372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Mar 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An active pixel sensor including low threshold voltage transistors advantageously provides an increased output swing over an active pixel sensor of the prior art. The low threshold voltage transistor can be achieved using either a native transistor or a depletion mode transistor. In a process in which a threshold adjustment implant step is separately masked, the active pixel sensor of the present invention can be manufactured with no additional masking requirements. In one embodiment, a low threshold voltage (VTN) allows a transistor acting as a reset switch to operate in the linear region, and allowing the reset switch transistor to share a common supply voltage source with a readout amplifier transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.