Optoelectronic devices and manufacturing method thereof
US6476379B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | May 4, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/4274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
It is a subject to realize an optoelectronic device for reliably monitoring a laser optical beam intensity by a photodetector. In the optoelectric device, a semiconductor laser chip, an optical fiber for taking a front laser beam of the semiconductor laser chip from the top end surface and a photodetector for receiving a rear laser beam of the semiconductor laser chip are fixed on a main surface of a platform, and each of the optical parts and portions including. an optical channels between each of the optical parts are covered with a silicone gel, wherein a portion of the main surface of the platform between the top end of the optical fiber and the semiconductor laser chip and between the photodetector and the semiconductor laser chip has concaves so that voids are not formed upon curing of the silicone gel. The edge of the concave on the side of the semiconductor laser chip is situated closer to the semiconductor laser chip than to the emitting facet of the semiconductor laser chip. The end of the bonding portion for fixing the semiconductor laser chip to the platform recedes inward of the emitting facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.