MOS-type semiconductor device and method for making same
US6476462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Dec 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An MOS-type semiconductor device comprises two semiconductors separated by an insulator. The two semiconductors comprise monocrystal semiconductors, each having a crystallographic orientation with respect to the insulator (or other crystallographic/semiconductor property) different to the crystallographic orientation (or other respective property) of the other semiconductor. This arrangement of crystallographic orientations (and other crystallographic/semiconductor properties) can yield reduced unintended electron tunneling or current leakage through the insulator vis a vis a semiconductor device in which such an arrangement is not used. Methods for forming the MOS-type semiconductor devices of the invention are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.