Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
US6479173B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−xOx]2, where M is a metal and X is 0≦X<1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.