Thin film transistor and liquid crystal display unit
US6479837B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Jan 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bottom-gate type thin-film transistor free from alignment shift of the gate electrode and from damage caused by injection of impurities. The crystal grains of a polycrystalline silicon thin-film are anisotropically grown to form a prescribed angle relative to the gate length direction. The angle between the gate length direction and the longitudinal direction of the grains is adjusted according to use of the liquid crystal display unit. The bottom-gate transistor includes an undercoat insulating layer containing impurities on the substrate. Impurities are diffused from the undercoat layer to the semiconductor layer by laser-annealing the amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.