Metal oxide semiconductor field effect transistor having a relatively high doped region in the channel for improved linearity
US6479846B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
A field effect transistor is disclosed having a relatively high doped region (of the same type dopant as the channel) to reduce the change in the depletion region within the channel with changes in the drain voltage (Vd). Changes in the drain current (Id) with changes in the drain voltage (Vd) is a cause of non-linearity for traditional MOSFET. Because of the additional higher doped region provided in the channel, the depletion region within the higher doped region changes less with changes in the drain voltage (Vd). The higher doped region is situated near the top of the channel, where most of the drain current flows. Thus, the higher doped region dominates the drain current through the device. Since the drain current is less susceptible to changes in drain voltage (Vd), a more linear device results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.