Semiconductor device for load drive circuit

US6479877B2 · kind B2 · utility

Assignee

• DENSO CORPORATION · JP

Inventors

• Yoshiki Koyama · Tsu, JP
• Nobumesa Ueda · Nagoya, JP
• Hiroshi Fujimoto · Calacoa Bellavista, PE

Key dates

• Filing date: Apr 18, 2001
• Grant date: Nov 12, 2002
• Expiry date: Apr 18, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/257

Abstract

A semiconductor device for a load drive circuit includes a main LDMOS device and a sense LDMOS device that are connected to each other in parallel to form a current mirror circuit. The main LDMOS device and the sense LDMOS device have plural drain cells and plural source cells that are arranged to form a generally square shape as a whole. In the plural drain cells, drain cells of the sense LDMOS device are arranged along a diagonal of the generally square shape.