Semiconductor device and semiconductor electret condenser microphone
US6479878B1 · kind B1 · utility
8Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Sep 12, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R19/04
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.