Two-dimensional resonant tunneling diode memory cell
US6480413B2 · kind B2 · utility
3Cited by
5References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Oct 10, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Two resonant tunneling diodes with hysteretic folding V-I characteristics are connected in series. The node voltage and the series current of the cell determine the memory state and there can be a large number of states. During writing, one writing pulse sets the pull-down RTD to one of the positive differential resistance region of the hysteretic V-I characteristic, and a second writing pulse sets the pull-up RTD to one of positive differential resistance region. During writing, the series current is sensed by measuring the colon ground current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.