Aluminum-free vertical cavity surface emitting lasers (VCSELs)
US6480520B1 · kind B1 · utility
2Cited by
2References
14Claims
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Key dates
| Filing date | Apr 17, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Apr 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An A1-free VCSEL is grown by MOCVD procedure by growing GaInP/GaAs as a conventional distributed Bragg reflector (DBR) 36 or less periods are then formed as the active layer. The DBRs are composed of repeating layers of a 69 nm period of GaAs and a 76 nm period of InGaP to form a superlattice as quarter wave thickness stacks. After the lower layer of n-type DBR is deposited by MOCVD, a lift-off procedure opens up windows in an evaporated layer of SiO2. The active region and upper p-type DBR is then deposited by MOCVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.