Methods of manufacturing tunnel magnetoresistive element, thin-film magnetic head and memory element
US6482657B2 · kind B2 · utility
31Cited by
8References
12Claims
0Family size
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Inventor
Key dates
| Filing date | Dec 28, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. In the step of forming the tunnel barrier layer on the free layer, an Al layer used for making the tunnel barrier layer is formed through sputtering, for example, on the free layer while the substrate is cooled. The Al layer is oxidized to form the tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.