Method of producing a semiconductor integrated circuit device and the semiconductor integrated circuit device
US6482727B2 · kind B2 · utility
1Cited by
5References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Jan 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amount of a semiconductor substrate cut due to etching in the bottom of a contact hole formed by the SAC technique is reduced. Silicon oxide films are dry etched under the conditions of increasing the etching selective ratio of the silicon oxide films to an insulating film. Then, the conditions are changed to those increasing the etching selective ratio of the insulating film to the silicon oxide films and the insulating film is etched by a predetermined amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.