Method of forming a semiconductor device using CMP to polish a metal film
US6482743B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Sep 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
For the purpose of providing a semiconductor and its manufacturing that can attain local smoothing by removing local defective surface morphology while attaining global surface smoothing, a substrate surface is smoothed by conducting chemical mechanical polishing in a plurality of separate steps using different types of slurry which are different in degree of dispersion of abrasive particles. For example, chemical mechanical polishing is first conducted by using non-suspension-type slurry, and chemical mechanical polishing is next conducted by using suspension-type slurry. By polishing a Cu film, for example, by using this chemical mechanical polishing, a plug is made in a via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.