Tunnel magnetoresistance effect element
US6483675B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.