Surface emitting semiconductor laser with oxidized post structure
US6483860B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Nov 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a surface emitting semiconductor laser that, with a relatively simple construction, can control the polarization of laser beam to a given direction and obtain a low threshold current and high output. Also, the present invention provides a laser array that has substantially no variations in polarization properties among plural laser devices arranged on a single substrate. In a surface emitting semiconductor laser in which upper and lower reflecting mirror layers are formed on a main face of a semiconductor substrate to sandwich an active layer, at least one of the upper and lower reflecting films including a selective oxidation layer oxidized in a circumferential part thereof, the main face of the semiconductor substrate is tilted with respect to a face containing a reference crystal axis, and the selective oxidation layer is formed by oxidizing a layer to be oxidized from a circumferential part thereof, wherein the circumferential shape of the layer, when cut by a face parallel to the main face, has at least no singular point and is macroscopically smooth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.