Process and apparatus for making oriented crystal layers
US6485565B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 19, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1004
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Thin films of single crystal-like materials are made by using flow-through ion beam deposition during specific substrate rotation around an axis in a clocking action. The substrate is quickly rotated to a selected deposition position, paused in the deposition position for ionized material to be deposited, then quickly rotated to the next selected deposition position. The clocking motion can be achieved by use of a lobed cam on the spindle with which the substrate is rotated or by stopping and starting a stepper motor at long and short intervals. Other symmetries can be programmed into the process, allowing virtually any oriented inorganic crystal to be grown on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.