Precursors for growth of heterometal-oxide films by MOCVD
US6485784B1 · kind B1 · utility
5Cited by
1References
40Claims
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Key dates
| Filing date | Jan 16, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02205
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metalorganic precursors for deposition of strontium tantalum and strontium niobium oxides by MOCVD techniques have the formula Sr[M(OR1)6-xLx]2 wherein x is form 1 to 6; M is Ta or Nb; R1 is a straight or branched chain alkyl group; and L is an alkoxide group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.