Method of making wafer having top and bottom emitting vertical-cavity lasers
US6485996B2 · kind B2 · utility
1Cited by
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14Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 25, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Apr 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A technique is described for determining the performance of substrate-side emitting VCSELs formed on a wafer. The technique involves forming top-emitting VCSELs on the same wafer as bottom-emitting VCSELs and then testing the top-emitting VCSELs and using the results to determine the performance of the bottom-emitting VCSELs of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.