Method for manufacturing fringe field switching mode liquid crystal display device
US6485997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2000 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Apr 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention discloses a method for manufacturing a fringe field switching mode liquid crystal display device. Here, a counter electrode, gate bus line and common electrode line are formed by one photolithography process including: a first process for coating a resist film on the MoW film; a second process for forming a resist pattern consisting of first and second patterns respectively covering gate bus line and common electrode line formation regions and maintaining a coating thickness, and a third pattern covering a counter electrode formation region and partially maintaining the coating thickness, by exposing/developing the resist film; a third process for forming the gate bus line and the common electrode line by dry-etching the MoW film using the resist pattern as an etch barrier, the first and second patterns being partially removed, the third pattern being completely removed, the MoW film on the counter electrode formation region being partially removed; a fourth process for forming the counter electrode by wet-etching the ITO film using the remained resist pattern and MoW film as an etch barrier; and a fifth process for removing the remained resist pattern and MoW…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.