Method of manufacturing a semiconductor device having regions of different conductivity types isolated by field oxide
US6486013B2 · kind B2 · utility
0Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has, in one embodiment, two wells of different conductivity types formed in a semiconductor substrate. The two wells are arranged to be adjacent to each other to form a junction therebetween. A field oxide film is formed to cover the junction at a main surface of the semiconductor substrate. Other field oxide films or field-shield isolation structures may be formed to isolate circuit elements from one another in the wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.