Method of forming polycrystalline semiconductor film
US6486046B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Sep 18, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is possible to prevent lowering in productivity of thin-film transistors with no decrease in performance of the transistors. Provided are depositing an amorphous semiconductor film on a substrate, a first irradiating the amorphous semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as a major component with a specific amount of oxygen, to change the amorphous semiconductor film into a polycrystalline semiconductor film, and a second irradiating the polycrystalline semiconductor film with an energy-rich beam in an atmosphere of a gas containing an inert gas as major component with oxygen of an amount less than the specific amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.