Led structure having a schottky contact and manufacturing method
US6486500B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 28, 2002 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/052
Abstract
A structure and manufacturing method of LED is disclosed. The manufacturing method of the structure of LED comprises: providing a substrate; on the substrate, forming in sequence a buffer layer, a first confining layer, an active layer, a second confining layer and a window layer; forming a first metal electrode beneath the substrate; forming a second metal electrode on the window layer, wherein there is a schottky contact surface between the second metal electrode and the window layer; forming a third metal electrode on the second metal electrode, wherein the third metal electrode has a feature of high melting point; forming a fourth metal electrode on the third metal electrode and the window layer, wherein there is an ohmic contact surface between the window layer and the fourth metal electrode; and forming a fifth metal electrode on the fourth metal electrode, wherein the fifth metal electrode has a feature of good adhesion, and when the substrate, the buffer layer and the first confining layer are n-type or p-type, the type of the second confining layer and window layer are opposite. The carriers are blocked from moving downward by the energy barrier between the schottky electr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.