Polarization independent-type semiconductor optical amplifier
US6487007B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jun 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3201
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polarization independent-type semiconductor optical amplifier comprises: a strained bulk active layer having a 20 nm to 90 nm-thick and having a tensile strain of a −0.10% to −0.60% strain amount; clad layers provided, sandwiching the strained bulk active layer; and a resonance suppressing means for suppressing resonance of light due to reflection on a light incident end face and a light exit end face of the strained bulk active layer, incident signal light entering at the light incident end face being amplified and exiting at the light exit end face, and an individual transmission gain of the exit signal light being substantially constant independent of a polarization state of the incident signal light. Whereby drastically increased fiber out saturation powers can be obtained with polarization independence retained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.