Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same
US6487110B2 · kind B2 · utility
24Cited by
5References
21Claims
0Family size
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Key dates
| Filing date | Sep 27, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Sep 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The fabrication process of a conventional MRAM using a magnetoresistive effect element as a memory device is difficult, and the device structure makes it difficult to decrease the cell area and increase the degree of integration. It is an object of this invention to realize an MRAM which can achieve a high integration degree. A memory device is characterized by including a magnetoresistive element, a bit line formed above this magnetoresistive element, and a write line. The magnetoresistive element is formed immediately above the drain region of a field-effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.