Semiconductor light emitting device
US6487226B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1998 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Sep 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3436
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device having a structure including an active layer between a p-type cladding layer and an n-type cladding layer on a base body comprises at least one of the p-type cladding layer and the n-type cladding layer has a lattice mismatch relative to the base body not smaller than 2.0×10−4 and not larger than 3.0×10−3 or not smaller than −1.5×10−3 and not larger than −2.0×10−4. Another semiconductor light emitting device comprises at least one of the p-type cladding layer and the n-type cladding layer and the active layer have a lattice mismatch relative to the base body not smaller than 2.0×10−4 and not larger than 3.0×10−3 or not smaller than −1.5×10−3 and not larger than −2.0×10−4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.