Patent · US Expired

Method and apparatus for producing semiconductor element

US6488021B1 · kind B1 · utility

5Cited by
8References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2000
Grant dateDec 3, 2002
Priority date
Expiry dateJan 6, 2021

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB28D5/0082
  • WIPO fieldOther special machines
  • WIPO sectorMechanical engineering

Abstract

A method for producing a semiconductor element comprises the steps of: forming a plurality of grooves on a first surface of a semiconductor multi-layer structure along a first direction: forming a plurality of multi-element bars by cleaving the semiconductor multi-layer structure along a second direction; placing at least one of the plurality of multi-element bars on a support stage; and cleaving the at least one of the plurality of multi-element bars along the plurality of grooves by moving a pressure member in a longitudinal direction of the at least one of the plurality of multi-element bars while a constant load is applied by the pressure member to a second surface of the at least one of the plurality of multi-element bars, the second surface being opposite a third surface corresponding to the first surface of the at least one of the plurality of multi-element bars.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.