Spinel ferrite thin film and method of manufacturing the same
US6488908B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B7/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.