Removing inherent stress via high temperature annealing
US6489184B1 · kind B1 · utility
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10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1536
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus are provided which decrease the amount of movement likely to occur during processing of a substrate. In particular, a horizontally supported dielectric panel is subjected to a series of processing steps during which the panel is heated, cooled, or maintained at a fixed temperature so as to a achieve a 2 to 1 reduction in material movement during subsequent processing. It is contemplated that application of the disclosed methods to a dielectric panel will be particularly beneficial when application is accomplished prior to laser drilling and sputtering the panel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.