Method of manufacturing a semiconductor component
US6489211B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Mar 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A method of manufacturing a semiconductor component includes providing a composite substrate (300) with a dielectric portion and a semiconductor portion and growing an epitaxial layer (400) over the composite substrate. The epitaxial layer has a polycrystalline portion (402) over the dielectric portion of the composite substrate and also has a monocrystalline portion (401) over the semiconductor portion of the composite substrate. A first dopant is diffused into the monocrystalline portion of the epitaxial layer to form an emitter region in the monocrystalline portion of the epitaxial layer while a second dopant is simultaneously diffused into the monocrystalline portion of the epitaxial layer to form an enhanced portion of the base region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.