Method for manufacturing charge-coupled image sensors
US6489246B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | May 1, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
A method of manufacturing an image sensor, the method comprises the steps providing a substrate having a gate insulating layer abutting a portion of the substrate; depositing a silicon layer on the gate insulating layer; creating a plurality of openings in the deposited silicon layer for forming a plurality of etched deposited silicon; growing an oxide on first surfaces of the etched deposited silicon which first surfaces initially form a boundary for the openings; coating photoresist in the plurality of openings between the first surfaces of the oxidized silicon; and exposing the photoresist for removing the photoresist which overlies the silicon and retains a portion of the photoresist in the openings and on the first surface of the oxidized silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.