Oxide thin film for bolometer and infrared detector using the oxide thin film
US6489613B1 · kind B1 · utility
12Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1999 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Sep 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide thin film for bolometer having a vanadium oxide represented by VOx, where x satisfies 1.5≦x≦2.0, part of vanadium ion in the vanadium oxide being substituted by metal ion M, where the metal ion M is at least one of chromium (Cr), aluminum (Al), iron (Fe), manganese (Mn), niobium (Nb), tantalum (Ta) and titanium (Ti). Also, provided is an infrared detector having a bolometer thin film defined above. The oxide thin film for bolometer offers a low resistivity and a large TCR value. Also, the infrared detector offers a finer temperature resolution capability (NETD) as low as 0.03° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.