Ultra sensitive silicon sensor
US6489615B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 15, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Dec 15, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Electro-thermal feedback is utilized for removing thermal conductance between a bolometer's absorber element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing the thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage of the mechanical support structure and electrical interconnects to equal the bolometer's absorber element temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.