Epitaxially grown p-type diffusion source for photodiode fabrication
US6489635B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Feb 20, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A p-i-n photodiode included a heavily dopes epitaxially grown layer of semiconductor. The photodiode is comprised of heterojunctions of epitaxial material grown on an InP semiconductor substrate (12, 14). A heavily doped layer (20) is patterned on top of an InP layer (18) to define the source of p-type diffusion for the definition of the active region (22) of the p-n junction. The epitaxially grown source layer (20) may be comprised of ternary or quaternary III-V semiconductor alloys, typically InxGa1−xAs. The principle can be extended to alloy layers that are not lattice-matched to the InP substrate. The p-type dopant is typically Zn, but may also consist of other commonly used p-type dopants such as Be.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.