Giant magnetoresistive sensor with a PtMnX pinning layer and a NiFeCr seed layer
US6490140B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Mar 17, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A giant magnetoresistive stack for use in a magnetic read head includes a NiFeCr seed layer, a ferromagnetic free layer, at least one nonmagnetic spacer layer, at least one ferromagnetic pinned layer, and at least one PtMnX pinning layer, where X is selected from the group consisting of Cr, Pd, Nb, Re, Rh, Ta, Ru, Os, Zr, Hf, Ni, Co, and Fe. The ferromagnetic free layer has a rotatable magnetic moment. The ferromagnetic pinned layer has a fixed magnetic moment and is positioned adjacent to the PtMnX pinning layer. The nonmagnetic spacer layer is positioned between the free layer and the pinned layer. The NiFeCr seed layer is positioned adjacent to either the free layer or the pinning layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.