Laser-diode-pumped laser apparatus in which Pr3+-doped laser medium is pumped with GaN-based compound laser diode
US6490309B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Sep 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a laser-diode-pumped laser apparatus, a solid-state laser crystal doped with at least one rare-earth element including at least Pr3+ is pumped with a laser diode, and emits laser light. In the first aspect, the laser diode has an active layer made of one of an InGaN, InGaNAs, and GaNAs materials, and an optical wavelength conversion element converts the solid-state laser light into ultraviolet laser light by wavelength conversion. In the second aspect, the solid-state laser crystal is codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+. In the third aspect, instead of the solid-state laser crystal, an optical fiber codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3+, Pm3+, and Nd3+ is pumped with a GaN-based compound laser diode. In the fourth aspect, an optical fiber codoped with Pr3+ and at least one of Er3+, Ho3+, Dy3+, Eu3+, Sm3, Pm3, and Nd3+ amplifies incident light having a wavelength which is identical with a wavelength of fluorescence generated by pumping of the optical fiber with a GaN-based compound laser diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.