Method for the growing of single crystals

US6491753B2 · kind B2 · utility

Assignee

• AVL LIST GMBH · AT

Inventors

• Peter W. Krempl · Leibnitz, AT
• Wolfgang Wallnofer · Graz, AT
• Ferdinand Krispel · Wundschuh, AT
• Herbert Thanner · Graz, AT

Key dates

• Filing date: Dec 27, 2000
• Grant date: Dec 10, 2002
• Expiry date: Jan 24, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S117/901
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

To obtain large, high-quality crystals of a metal orthophosphate, in particular GaPO4 or AlPO4, from a nutrient solution with the use of seeds, a seed crystal is used having at least two rod- or wafer-shaped legs which form an angle with each other and define a main growth region, and which are positioned eccentrically in the single crystal grown. Contagious faces of two seed legs, which have been chosen for crystal growing, enclose an angle <180&deg;. In this way the yield of the high-quality crystal region will be increased.