High voltage shield
US6492219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 23, 2001 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Jul 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit has a guard ring for shielding a first area 14 (eg. high voltage area) from a second area 15 (eg.low voltage). The guard ring comprises a conductive guard ring 6, (eg. metal), which is partially exposed through a passivation layer 13 in the integrated circuit 1. A semiconductor guard ring 8, (eg. silicon), is isolated from the first and second areas of semiconductor by at least two trench rings 16, one located on each side of the semiconductor guard ring 8. A plurality of conductive elements (comprising a metal connection plate 18 and via 19) connect the conductive guard ring 6 and the semiconductor guard ring 8 at spaced apart intervals. The conductive guard ring 6, semiconductor guard ring 8 and conductive elements are all connected to a ground source. If high energy particles move from the first area towards the second area, they are attracted to the exposed metal, and their charge is conducted to ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.