Semiconductor light emitting device
US6492660B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 2001 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Jan 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3086
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device includes a cladding layer having a first conductive type, an active layer, and a semiconductor layer including at least a cladding layer and having a second conductive type reversed to the first conductive type, which layers are sequentially stacked on a substrate; wherein a ridge is formed on part of an upper portion of the semiconductor layer; each of the cladding layer having the first conductive type, the active layer, and the semiconductor layer having the second conductive type is made from a nitride based group III-V compound semiconductor; and the width of the ridge is in a range of 1.9 to 2.6 &mgr;m. The semiconductor light emitting device is stably operable with an output of about 30 mW by setting a threshold current to 100 mA or less and also setting a horizontal angle to 6° or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.