CMOS process
US6492671B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 28, 2001 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Mar 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
A high-voltage MOS transistor is produced in a low-voltage CMOS process without adding extra process steps for producing the high-voltage MOS For. The high-voltage MOS transistor is to be used as an analog line driver and is produced on tho same silicon area as low voltage AD/DA-converters. Hereby, the low-voltage and the high-voltage design block are directly compatible with each other, e.g. have the same threshold voltages, which simplifies the design of the total solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.