Patent · US Expired

CMOS process

US6492671B2 · kind B2 · utility

2Cited by
2References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 28, 2001
Grant dateDec 10, 2002
Priority date
Expiry dateMar 28, 2021

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/856

Abstract

A high-voltage MOS transistor is produced in a low-voltage CMOS process without adding extra process steps for producing the high-voltage MOS For. The high-voltage MOS transistor is to be used as an analog line driver and is produced on tho same silicon area as low voltage AD/DA-converters. Hereby, the low-voltage and the high-voltage design block are directly compatible with each other, e.g. have the same threshold voltages, which simplifies the design of the total solution.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.