Spin-valve magnetoresistive sensor and magnetic head having such a spin-valve magnetoresistive sensor
US6493196B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1999 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Dec 29, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A spin-valve magnetoresistive sensor includes a free layer of a ferromagnetic material, a pinned layer provided on the free layer and a pinning layer of an anti-ferromagnetic material provided on the pinned layer, the anti-ferromagnetic material being an ordered alloy containing manganese. The pinned layer includes a first pinned layer of a ferromagnetic material, a second pinned layer of a ferromagnetic material provided on the first pinned layer and an intermediate layer interposed between the first and second pinned layers such that the first and second pinned layers establish a super-exchange interaction in an anti-parallel manner. The second pinned layer has a magnetic moment smaller than a magnetic moment of the first pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.