Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor
US6493366B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 2000 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | May 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a second Group III-V semiconductor material layer; a second con…
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