Lateral injection vertical cavity surface-emitting laser
US6493368B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2000 |
| Grant date | Dec 10, 2002 |
| Priority date | — |
| Expiry date | Jul 4, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.